PART |
Description |
Maker |
T436432B-7SG T436432B-55SG T436432B-5SG T436432B-6 |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology http:// Taiwan Memory Technolog...
|
M12L32321A-7BG M12L32321A-5.5BG M12L32321A-6BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
W9812G2IH |
1M × 4 BANKS × 32BIT SDRAM
|
Winbond
|
K4S643233E-SEN |
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
GS8150F32 |
16Mb12K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步静态RAM(带2位脉冲地址计数器))
|
GSI Technology
|
W946432AD W946432A |
SDRAM 2Mx32 512K X 4 BANKS X 32 BITS DDR SDRAM
|
Winbond Electronics WINBOND[Winbond]
|
W981616BH |
SDRAM 1Mx16 512K ′ 2 BANKS ′ 16 BITS SDRAM
|
Winbond Electronics
|
50S116T |
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE[Ceramate Technical]
|
W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM 512K x 4 BANKS x 32 BITS SDRAM From old datasheet system
|
Winbond Electronics WINBOND[Winbond]
|
50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|